General
| Diode Configuration | 1 Pair Common Cathode |
|---|---|
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Discontinued at |
| Series | CoolSiC™+ |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|