Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | IDW10G65 |
|---|---|
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Discontinued at |
| Reverse Recovery Time (trr) | 0 ns |
| Series | CoolSiC™+ |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 400 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|