IDB10S60C

Infineon Technologies

IDB10S60C

Analog & Power

DIODE SIL CARB 600V 10A TO263-3

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberIDB10
Capacitance @ Vr, F480pF @ 1V, 1MHz
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
SeriesCoolSiC™+
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr140 µA @ 600 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

Environmental

Operating Temperature - Junction-55°C ~ 175°C