IAUZ40N06S5N050ATMA1

Infineon Technologies

IAUZ40N06S5N050ATMA1

Datasheet

Analog & Power

MOSFET N-CH 60V 40A TSDSON-8-33

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Base Product NumberIAUZ40
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 29µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C40A (Tj)
Max Power Dissipation71W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSDSON-8-33

Environmental

Operating Temperature-55°C~175°C(TJ)