IAUZ30N06S5L140ATMA1

Infineon Technologies

IAUZ30N06S5L140ATMA1

Datasheet

Analog & Power

MOSFET N-CH 60V 30A TSDSON-8-32

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 15A, 10V
Base Product NumberIAUZ30
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds888 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.2V @ 10µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C30A (Tj)
Max Power Dissipation33W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSDSON-8-32

Environmental

Operating Temperature-55°C~175°C(TJ)