IAUT150N10S5N035ATMA1

Infineon Technologies

IAUT150N10S5N035ATMA1

Datasheet

Analog & Power

MOSFET N-CH 100V 150A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6110 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 110µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Max Power Dissipation166W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-1

Environmental

Operating Temperature-55°C ~ 175°C (TJ)