IAUS200N08S5N023ATMA1

Infineon Technologies

IAUS200N08S5N023ATMA1

Analog & Power

MOSFET N-CH 80V 200A HSOG-8

Active8-PowerSMD, Gull WingAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7670 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 130µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation200W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101