IAUC50N08S5L096ATMA1

Infineon Technologies

IAUC50N08S5L096ATMA1

Datasheet

Analog & Power

MOSFET_(75V 120V( PG-TDSON-8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.6mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1684 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 24µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A
Max Power Dissipation60W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-33

Environmental

Operating Temperature-55°C ~ 175°C (TJ)