IAUA250N04S6N005AUMA1

Infineon Technologies

IAUA250N04S6N005AUMA1

Datasheet

Analog & Power

OPTIMOS POWER MOSFET

Active5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.55mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11144 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 145µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C62A (Ta)
Max Power Dissipation250W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-5

Environmental

Operating Temperature-55°C~175°C(TJ)