IAUA210N10S5N024AUMA1

Infineon Technologies

IAUA210N10S5N024AUMA1

Datasheet

Analog & Power

MOSFET_(75V 120V( PG-HSOF-5

Active5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8696 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 150µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C210A (Tj)
Max Power Dissipation238W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-4

Environmental

Operating Temperature-55°C~175°C(TJ)