IAUA200N04S5N010ATMA1

Infineon Technologies

IAUA200N04S5N010ATMA1

Datasheet

Analog & Power

MOSFET_(20V 40V)

Obsolete5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7650 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 100µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation167W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-1

Environmental

Operating Temperature-55°C~175°C(TJ)