FF8MR12W2M1B11BOMA1

Infineon Technologies

FF8MR12W2M1B11BOMA1

Datasheet

Analog & Power

MOSFET 2N-CH 1200V AG-EASY2BM-2

ObsoleteModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 150A, 15V (Typ)
Base Product NumberFF8MR12
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 800V
ManufacturerInfineon Technologies
Mounting TypeChassis Mount
Product StatusObsolete
SeriesCoolSiC™+
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.55V @ 60mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C150A (Tj)

Mechanical

PackageTray
Package / CaseModule
Supplier Device PackageAG-EASY2BM-2

Environmental

Operating Temperature-40°C ~ 150°C (TJ)