FF8MR12W1M1HS4PB11BPSA1

Infineon Technologies

FF8MR12W1M1HS4PB11BPSA1

Analog & Power

SIC 2N-CH 1200V AG-EASY1B

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.1mOhm @ 100A, 18V
Base Product NumberFF8MR12
Configuration2 N-Channel
FET FeatureSilicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds8800pF @ 800V
ManufacturerInfineon Technologies
Mounting TypeChassis Mount
Product StatusActive
SeriesCoolSiC™
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.15V @ 40mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A (Tj)

Mechanical

PackageTray
Package / CaseModule
Supplier Device PackageAG-EASY1B

Environmental

Operating Temperature-40°C ~ 150°C (TJ)