F423MR12W1M1PB11BPSA1

Infineon Technologies

F423MR12W1M1PB11BPSA1

Datasheet

Analog & Power

MOSFET 4N-CH 1200V 50A AG-EASY1B

ObsoleteModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22.5mOhm @ 50A, 15V
Base Product NumberF423MR12
Configuration4 N-Channel
Gate Charge (Qg) (Max) @ Vgs124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds3.68nF @ 800V
ManufacturerInfineon Technologies
Mounting TypeChassis Mount
PackagingTray
Part StatusObsolete
SeriesEasyPACK™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 20mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C50A

Mechanical

Package / CaseModule
Supplier Device PackageAG-EASY1B-2

Environmental

Operating Temperature-40°C ~ 150°C (TJ)