DF23MR12W1M1B11BPSA1

Infineon Technologies

DF23MR12W1M1B11BPSA1

Datasheet

Analog & Power

SIC 2N-CH 1200V AG-EASY1BM-2

ObsoleteModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V (Typ)
Base Product NumberDF23MR12
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 800V
ManufacturerInfineon Technologies
Mounting TypeChassis Mount
Product StatusObsolete
SeriesCoolSiC™+
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.55V @ 10mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A (Tj)

Mechanical

PackageTray
Package / CaseModule
Supplier Device PackageAG-EASY1BM-2

Environmental

Operating Temperature-40°C ~ 150°C (TJ)