BTS282Z E3230

Infineon Technologies

BTS282Z E3230

Analog & Power

MOSFET N-CH 49V 80A TO220-7

ObsoleteTO-220-7Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V
FET FeatureTemperature Sensing Diode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesTEMPFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 240µA

Electrical

Drain-to-Source Voltage49 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-7
Supplier Device PackageP-TO220-7-230

Environmental

Operating Temperature-40°C ~ 175°C (TJ)