BTS115AE6327

Infineon Technologies

BTS115AE6327

Analog & Power

N-CHANNEL POWER MOSFET

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 7.8A, 4.5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds735 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesTEMPFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C15.5A (Tc)
Max Power Dissipation50W

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

Environmental

Operating Temperature-55°C~150°C(TJ)