BTS114AE3045A

Infineon Technologies

BTS114AE3045A

Analog & Power

N-CHANNEL POWER MOSFET

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTEMPFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1mA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Max Power Dissipation50W

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO220-3-5

Environmental

Operating Temperature-55°C~150°C(TJ)