BTS113ANKSA1

Infineon Technologies

BTS113ANKSA1

Analog & Power

MOSFET N-CH 60V 11.5A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 5.8A, 4.5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesTEMPFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)