BSZ215CHXTMA1

Infineon Technologies

BSZ215CHXTMA1

Datasheet

Analog & Power

MOSFET N/P-CH 20V 8TSDSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 5.1A, 4.5V
ConfigurationN and P-Channel Complementary
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds419pF @ 10V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 110µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C5.1A, 3.2A
Power - Max2.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSDSON-8

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101