BSZ0908NDXTMA2

Infineon Technologies

BSZ0908NDXTMA2

Analog & Power

MOSFET 2N-CH 30V 4.8A WISON-8

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Base Product NumberBSZ0908
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds340pF @ 15V, 730pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4.8A (Ta), 7.6A (Ta)
Power - Max700mW (Ta), 860mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePG-WISON-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)