BSZ042N04NSG

Infineon Technologies

BSZ042N04NSG

Analog & Power

MOSFET N-CH 40V 40A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 20 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesOptiMOS™ 3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 36µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation2.1W (Ta), 69W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~150°C(TJ)