Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 2.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 10 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 750mV @ 11µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Max Power Dissipation | 500mW (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |