BSS606NH6327XTSA1

Infineon Technologies

BSS606NH6327XTSA1

Datasheet

Analog & Power

MOSFET N-CH 60V 3.2A SOT89

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 3.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds657 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 15µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-243AA
Supplier Device PackagePG-SOT89

Environmental

Operating Temperature-55°C ~ 150°C (TJ)