BSS209PWH6327XTSA1

Infineon Technologies

BSS209PWH6327XTSA1

Datasheet

Analog & Power

MOSFET P-CH 20V 630MA SOT323-3

ActiveSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs550mOhm @ 630mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds115 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 3.5µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C630mA (Tc)
Max Power Dissipation300mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323

Environmental

Operating Temperature-55°C ~ 150°C (TJ)