BSS209PW

Infineon Technologies

BSS209PW

Analog & Power

MOSFET P-CH 20V 580MA SOT323-3

ObsoleteSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs550mOhm @ 580mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds89.9 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 3.5µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C580mA (Ta)
Max Power Dissipation520mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323

Environmental

Operating Temperature-55°C ~ 150°C (TJ)