BSS139IXTMA1

Infineon Technologies

BSS139IXTMA1

Datasheet

Analog & Power

250V N-CH SMALL SIGNAL MOSFET IN

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14Ohm @ 100mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 56µA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Max Power Dissipation360mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3-U01

Environmental

Operating Temperature-55°C~150°C(TJ)