BSO615CT

Infineon Technologies

BSO615CT

Analog & Power

MOSFET N/P-CH 60V 3.1A/2A 8DSO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs110mOhm @ 3.1A, 10V
Base Product NumberBSO615
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSIPMOS®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 20µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3.1A, 2A
Power - Max2W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)