BSO215C

Infineon Technologies

BSO215C

Analog & Power

MOSFET N/P-CH 20V 3.7A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 3.7A, 10V
Base Product NumberBSO215
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds246pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSIPMOS®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 10µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3.7A
Power - Max2W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)