BSO080P03NS3EGXUMA1

Infineon Technologies

BSO080P03NS3EGXUMA1

Analog & Power

MOSFET P-CH 30V 12A 8DSO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 14.8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6750 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3.1V @ 150µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)