Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 18A, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | OptiMOS™3 M |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Max Power Dissipation | 2.5W |
| Package | Bulk |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
| Operating Temperature | -55°C~150°C |
|---|