BSO033N03MSGXUMA1

Infineon Technologies

BSO033N03MSGXUMA1

Datasheet

Analog & Power

MOSFET N-CH 30V 17A 8DSO

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.3mOhm @ 22A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9600 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Max Power Dissipation1.56W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)