BSL308PEH6327XTSA1

Infineon Technologies

BSL308PEH6327XTSA1

Datasheet

Analog & Power

MOSFET 2P-CH 30V 2A TSOP6-6

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 2A, 10V
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 11µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2A
Power - Max500mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackagePG-TSOP6-6

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101