BSG0811NDATMA1

Infineon Technologies

BSG0811NDATMA1

Datasheet

Analog & Power

MOSFET 2N-CH 25V 19A/41A TISON8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Base Product NumberBSG0811
Configuration2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 12V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C19A, 41A
Power - Max2.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)