Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 30 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | OptiMOS™ 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 33µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Max Power Dissipation | 38W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric ST |
| Supplier Device Package | MG-WDSON-2 |
| Operating Temperature | -40°C~150°C(TJ) |
|---|