BSF077N06NT3GXUMA1

Infineon Technologies

BSF077N06NT3GXUMA1

Analog & Power

MOSFET N-CH 60V 13A/56A 2WDSON

Obsolete3-WDSONAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.7mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 33µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 56A (Tc)
Max Power Dissipation2.2W (Ta), 38W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™

Environmental

Operating Temperature-40°C~150°C(TJ)