BSD840N L6327

Infineon Technologies

BSD840N L6327

Datasheet

Analog & Power

MOSFET 2N-CH 20V 0.88A SOT363

Obsolete6-VSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 880mA, 2.5V
Base Product NumberBSD840
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds78pF @ 10V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id750mV @ 1.6µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C880mA
Power - Max500mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)