BSD816SNH6327

Infineon Technologies

BSD816SNH6327

Analog & Power

MOSFET N-CH 20V 1.4A SOT363-6

Active6-VSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 2.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 3.7µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageBulk
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6

Environmental

Operating Temperature-55°C~150°C(TJ)