BSD316SNL6327XT

Infineon Technologies

BSD316SNL6327XT

Datasheet

Analog & Power

MOSFET N-CH 30V 1.4A SOT363-6

Obsolete6-VSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds94 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 3.7µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Environmental

Operating Temperature-55°C~150°C(TJ)