BSD223P

Infineon Technologies

BSD223P

Analog & Power

MOSFET 2P-CH 20V 0.39A SOT363

Obsolete6-VSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 390mA, 4.5V
Base Product NumberBSD223
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds56pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 1.5µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C390mA
Power - Max250mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)