BSC882N03LS G

Infineon Technologies

BSC882N03LS G

Analog & Power

N-CHANNEL POWER MOSFET

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.2mOhm @ 30A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™3 M
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage34 V
Drive Voltage (Max Rds On, Min Rds On)10V

Mechanical

PackageBulk
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)