BSC190N12NS3GATMA1

Infineon Technologies

BSC190N12NS3GATMA1

Datasheet

Analog & Power

MOSFET N-CH 120V 8.6A/44A TDSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs19mOhm @ 39A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 60 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 42µA

Electrical

Drain-to-Source Voltage120 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta), 44A (Tc)
Max Power Dissipation69W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-1

Environmental

Operating Temperature-55°C ~ 150°C (TJ)