BSC094N06LS5ATMA1

Infineon Technologies

BSC094N06LS5ATMA1

Datasheet

Analog & Power

MOSFET N-CHANNEL 60V 47A 8TDSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.4mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 14µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Max Power Dissipation36W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)