BSC080P03LSGAUMA1

Infineon Technologies

BSC080P03LSGAUMA1

Datasheet

Analog & Power

MOSFET P-CH 30V 16A/30A TDSON-8

Discontinued8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6140 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 30A (Tc)
Max Power Dissipation2.5W (Ta), 89W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)