BSC074N15NS5ATMA1

Infineon Technologies

BSC074N15NS5ATMA1

Datasheet

Analog & Power

MOSFET N-CH 150V 114A TSON-8-3

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.4mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 75 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.6V @ 136µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Max Power Dissipation214W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSON-8-3

Environmental

Operating Temperature-55°C~175°C(TJ)