BSC072N03LDGATMA1

Infineon Technologies

BSC072N03LDGATMA1

Analog & Power

MOSFET 2N-CH 30V 11.5A 8TDSON

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
Base Product NumberBSC072N03
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C11.5A
Power - Max57W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)