BSC009N04LSSCATMA1

Infineon Technologies

BSC009N04LSSCATMA1

Datasheet

Analog & Power

TRENCH <= 40V

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.24mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9520 pF @ 20 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C301A (Tc)
Max Power Dissipation167W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device PackagePG-WSON-8-2

Environmental

Operating Temperature-55°C ~ 175°C (TJ)