BSB165N15NZ3GXUMA1

Infineon Technologies

BSB165N15NZ3GXUMA1

Datasheet

Analog & Power

MOSFET N-CH 150V 9A/45A 2WDSON

Active3-WDSONAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16.5mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 75 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 110µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 45A (Tc)
Max Power Dissipation2.8W (Ta), 78W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™

Environmental

Operating Temperature-40°C ~ 150°C (TJ)