BSB104N08NP3GXUSA1

Infineon Technologies

BSB104N08NP3GXUSA1

Datasheet

Analog & Power

MOSFET N-CH 80V 13A/50A 2WDSON

Discontinued3-WDSONAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.4mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 40µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 50A (Tc)
Max Power Dissipation2.8W (Ta), 42W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™

Environmental

Operating Temperature-40°C ~ 150°C (TJ)