BSB012N03LX3G

Infineon Technologies

BSB012N03LX3G

Analog & Power

N-CHANNEL POWER MOSFET

Active3-WDSONAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16900 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C39A (Ta), 180A (Tc)
Max Power Dissipation2.8W (Ta), 89W (Tc)

Mechanical

PackageBulk
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™

Environmental

Operating Temperature-40°C ~ 150°C (TJ)